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HL6738MG
Visible High Power Laser Diode
ADE-208-601B (Z) 3rd Edition May 1998 Description
The HL6738MG is a 0.68 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. Hermetic sealing of the small package ( 5.6 mm) assures high reliability.
Application
* Optical disc memories * Optical equipment
Features
* * * * High output power Visible light output Small package Low astigmatism : 35 mW (CW) : p = 680 to 695 nm : 5.6 mm : 6 m Typ (PO = 5 mW)
Package Type * HL6738MG: MG Internal Circuit
1 3
PD
LD
2
HL6738MG
Absolute Maximum Ratings (TC = 25C)
Item Optical output power Pulse optical output power Laser diode reverse voltage Photo diode reverse voltage Operating temperature Storage temperature Symbol PO PO (pulse) VR
(LD)
Value 35 50 * 2 30 -10 to +70 -40 to +85
Unit mW mW V V C C
VR (PD) Topr Tstg
Note: Pulse condition : Pulse width = 100 ns, duty = 50%
Optical and Electrical Characteristics (TC = 25C)
Item Optical output power Pluse optical output power Threshold current Operating voltage Slope efficiency Lasing wavelength Beam divergence parallel to the junction Beam divergence parpendicular to the junction Monitor current Asitgmatism IS AS 17 0.02 -- 19 0.1 6 23 0.45 -- deg. mA m PO = 30 mW PO = 30 mW, VR (PD) = 5 V PO = 5 mW, NA = 0.55 Symbol PO PO(pulse) Ith VOP s p // Min 35 50 30 2.1 0.5 680 7 Typ -- -- 45 2.5 0.7 690 8.5 Max -- -- 70 2.8 0.9 695 10.5 Unit mW mW mA V mW/mA nm deg. Test Conditions Kink free * Kink free * -- PO = 30 mW 18(mW) / (I(24mW) - I (6mW)) PO = 30 mW PO = 30 mW
Note: Kink free is confirmed at the temperature of 25C.
2
HL6738FM
Curve Characteristics
Optical Output Power vs. Forward Current 50 Optical Output Power PO (mW) 40 30 20 10 0 TC = 25C TC = 60C TC = 0C TC = 70C Monitor Current IS (mA) 200 Monitor Current vs. Optical Output Power 0.5 VR (PD) = 5V TC = 25C 0.4 0.3 0.2 0.1 0
0
40
80
120
160
0
10
20
30
40
50
Forward Current IF (mA)
Optical Output Power PO (mW)
Slope Efficiency vs. Case Temperature 1.0 Slope Efficiency S (mW/mA) 0.8 0.6 0.4 0.2 0
Threshold Current vs. Case Temperature 100 Threshold Current Ith (mA) 10
0
10
20
30
40
50
60
70
80
0
10
20
30
40 50
60
70
80
Case Temperature TC (C)
Case Temperature TC (C)
3
HL6738MG
Monitor Current vs. Case Temperature 1.0 0.8 0.6 0.4 0.2 0 Lasing Wavelength p (nm) Monitor Current IS (mA) PO = 30mW VR (PD) = 5V Lasing Wavelength vs. Case Temperature 705 PO = 30mW 700 695 690 685 680
0
10 20 30 40 50 60
70 80
0
10 20 30 40 50 60 70 Case Temperature TC (C)
80
Case Temperature TC (C)
Lasing Spectrum TC = 25C PO = 30mW
Polarization Ratio vs. Optical Output Power 1000 TC = 25C NA = 0.55 800 Polarization Ratio 600 400 200 0
Relative Intensity
PO = 20mW
PO = 10mW PO = 5mW 685 690 Lasing Wavelength p (nm) 695
0
10
20
30
40
50
Optical Output Power PO (mW)
4
HL6738FM
Far Field Pattern 1.0 PO = 30mW TC = 25C Relative Intensity
Perpendicular
Astigmatism vs. Optical Output Power 10 TC = 25C NA = 0.55 Astigmatism AS (m) 8 6 4 2 0
0.8 0.6 0.4
Parallel
0.2 0 -40 -30 -20 -10 0
10 20 30 40
0
10
20
30
40
50
Angle (deg)
Optical Output Power PO (mW)
Frequency Response 3dB/div PO = 3mW
Electrostatic Destruction (MILstandard) 100 80 Survival Rate (%) Forward N = 10pcs judgement IO 10%
Gain (dB)
60 40 20 0
1M
10M
100M
1G 3G
0
1
2
3
4
Frequency (Hz)
Applied Voltage (kV)
5
HL6738MG
Characteristics Distribution
1000 800 600 400 200 0 30 Min : 40.2 Max: 57.9 Typ : 45.8 N : 1400pcs N (pcs) 1000 PO = 30mW 800 600 400 200 0 70 Min : 80.1 Max: 105.0 Typ : 88.0 N : 1400pcs
N (pcs)
40
50
60
70
80
80
90
100
110
120
Threshold Current Ith (mA)
Operating Current IOP (mA)
1000 18mW I(24mW)-I(6mW) 800 600 400 200 0 0.5 Min : 0.560 Max : 0.848 Typ : 0.712 N : 1400pcs
1000 800 600 400 200 0 Po=30mW VR(PD)=5V Min : 0.049 Max : 0.178 Typ : 0.118 N : 1400pcs
N (pcs)
0.6
0.7
0.8
0.9
1.0
N (pcs)
0
0.1
0.2
0.3
0.4
0.5
Slope Efficiency s (mW/mA)
Monitor Current IS (mA)
6
HL6738FM
1000 PO = 30mW 800 600 400 200 0 Min : 7.6 Max : 9.9 Typ : 8.4 N : 1400pcs 800 600 400 200 0 16 1000 PO = 30mW Min : 18.0 Max : 21.7 Typ : 18.8 N : 1400pcs
N (pcs)
7
8
9
10
11
12
N (pcs)
18
20
22
24
26
Parallel // (deg)
Perpendicular (deg)
1000 PO = 30mW 800 600 400 200 0 Min : 2.36 Max : 2.74 Typ : 2.50 N : 1400pcs
1000 PO = 30mW 800 Min : 684.8 Max: 694.0 Typ : 691.5 N : 1400pcs
N (pcs)
N (pcs) 2 2.2 2.4 2.6 2.8 3
600 400 200 0 680
690 Lasing Wavelength p (nm)
700
Operating Voltage VOP (V)
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HL6738MG
Package Dimensions
Unit: mm 0.4 +0.1 -0 5.6 +0 -0.025 1.0 0.1 (0.4)
1.6 0.2 2.3 0.2 4.1 0.3 3.55 0.1
0.25 3
Glass Emitting Point
1.2 0.1
6.5 1.0
3 - 0.45 0.1 1 2 3
1 2
2.0 0.2
1.27
(90)
Hitachi Code JEDEC EIAJ Weight (reference value)
LD/MG 0.3 g
8
HL6738FM
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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